Osamu Mishima

Title: Osamu Mishima: Innovator in cBN Semiconductor Technology

Introduction

Osamu Mishima is a notable inventor based in Tsukuba, Japan, recognized for his contributions to semiconductor technology. He holds four patents, showcasing his innovative approach to developing solid electronic elements.

Latest Patents

Mishima's latest patents focus on the method of making cBN (cubic Boron Nitride) semiconductor devices with ohmic electrodes. These devices are designed to function as solid electronic elements, which can be classified as n-type, p-type, or pn junction types. The process involves depositing molybdenum onto n-type doped regions or platinum onto p-type doped regions of the cBN crystal to create electrodes with ohmic characteristics. The deposition is achieved through a vapor deposition method, followed by heating the attached substance in an inactive gas atmosphere at temperatures ranging from 300°C to 1100°C. The resulting cBN semiconductor devices can be utilized in various applications, including rectifiers, transistors, and light-emitting diodes.

Career Highlights

Throughout his career, Osamu Mishima has worked at prestigious institutions such as the National Institute for Research in Inorganic Materials and the National Institute for Research in Organic Materials. His work has significantly advanced the field of semiconductor technology, particularly in the development of cBN-based devices.

Collaborations

Mishima has collaborated with notable colleagues, including Koh Era and Shinobu Yamaoka, contributing to the advancement of research in semiconductor technology.

Conclusion

Osamu Mishima's innovative work in cBN semiconductor technology has made a significant impact in the field of electronics. His patents and career achievements reflect his dedication to advancing solid electronic elements, paving the way for future innovations.