Tottori, Japan

Osamu Kishimoto

This inventor holds 1 USPTO granted patent. Top assignee: Omron Corporation. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Osamu Kishimoto. Retrieved from https://idiyas.com/inventor/osamu-kishimoto-db4125c9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Osamu Kishimoto: Innovator in Pressure Sensor Technology

Introduction

Osamu Kishimoto is a notable inventor based in Tottori, Japan. He has made significant contributions to the field of pressure sensor technology. His innovative approach has led to the development of a unique pressure sensor that stands out for its efficiency and simplicity.

Latest Patents

Kishimoto holds a patent for a pressure sensor and its manufacturing method. This small-sized pressure sensor is designed with fewer parts and assembly steps, resulting in a simple structure. It boasts high assembly precision and minimal dispersion in operational characteristics. The sensor comprises a base member, a stationary electrode, moving electrode receiving portions, and a diaphragm, all working together to enhance performance.

Career Highlights

Osamu Kishimoto is associated with Omron Corporation, a leading company in automation and sensing technology. His work at Omron has allowed him to focus on advancing sensor technology, contributing to various applications in different industries.

Collaborations

Kishimoto has collaborated with notable coworkers, including Yasushi Shimomoto and Kenji Shinohara. Their combined expertise has fostered innovation and development in their respective fields.

Conclusion

Osamu Kishimoto's contributions to pressure sensor technology exemplify his innovative spirit and dedication to advancing engineering solutions. His patent reflects a commitment to creating efficient and effective technologies that can benefit various applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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