Kuwana, Japan

Osamu Arisumi

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):

Title: Inventor Spotlight: Osamu Arisumi

Introduction

Osamu Arisumi, an innovative inventor based in Kuwana, Japan, has made significant contributions to the field of memory devices. With a keen focus on advancing technology, he holds a patent that illustrates his inventive prowess.

Latest Patents

One of Osamu Arisumi's notable patents is for a memory device designed to improve the structural and functional capabilities of memory systems. According to the patent, the memory device comprises a substrate and a structure with a plurality of conductive layers stacked atop the substrate. Additionally, it features a pillar containing a semiconductor layer that extends perpendicularly to the substrate's surface. This semiconductor layer is uniquely designed with a first portion, which is thicker compared to a second portion located between the first and the substrate, enhancing the device's efficiency and performance.

Career Highlights

Osamu Arisumi is affiliated with Kioxia Corporation, a company recognized for its advancements in memory storage solutions. His role within Kioxia allows him to explore cutting-edge technologies and contribute to the development of innovative products that push the boundaries of memory devices.

Collaborations

Throughout his career, Arisumi has collaborated with various professionals, including his coworker Yasuhiro Uchimura. Together, they have focused on research and development that aim to enhance the efficiency of memory devices and foster innovation within the tech industry.

Conclusion

Osamu Arisumi exemplifies the spirit of innovation in technology, particularly in the realm of memory devices. His patent reflects a blend of creativity and technological advancement, solidifying his role as a key inventor at Kioxia Corporation. As the industry evolves, contributions from inventors like Arisumi will continue to shape the future of memory technology.

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