Company Filing History:
Years Active: 2018-2021
Title: Ombretta Donghi: Innovator in Memory Device Fabrication
Introduction
Ombretta Donghi is a prominent inventor based in Lesmo, Italy. She has made significant contributions to the field of memory device technology, holding a total of 3 patents. Her innovative work focuses on the fabrication methods of memory devices, showcasing her expertise and creativity in this specialized area.
Latest Patents
One of Ombretta Donghi's latest patents is titled "Cross-point memory and methods for fabrication of same." This patent discloses a method for fabricating a memory device that involves several key steps. The method begins with patterning a first conductive line that extends in a first direction. Following this, a free-standing pillar of a memory cell stack is formed on the first conductive line. This process includes depositing a memory cell stack that comprises a selector material and a storage material over the conductive line. The memory cell stack is then patterned to create the free-standing pillar. Finally, a second conductive line is patterned on the pillar, extending in a second direction that crosses the first direction.
Career Highlights
Ombretta Donghi is currently employed at Micron Technology Incorporated, where she continues to advance her research and development in memory technologies. Her work has been instrumental in enhancing the efficiency and effectiveness of memory devices, contributing to the ongoing evolution of this critical technology.
Collaborations
Throughout her career, Ombretta has collaborated with notable colleagues, including Marcello Ravasio and Samuele Sciarrillo. These partnerships have fostered a dynamic environment for innovation and have led to the successful development of cutting-edge memory solutions.
Conclusion
Ombretta Donghi's contributions to the field of memory device fabrication are noteworthy and impactful. Her innovative patents and collaborative efforts highlight her role as a leading inventor in this technology sector. Her work continues to influence advancements in memory devices, paving the way for future innovations.