Orlando, FL, United States of America

Olatunji Okunola

This inventor holds 1 USPTO granted patent. Top assignee: The United States of America as Represented by the Administrator of the. Active years: 1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Olatunji Okunola. Retrieved from https://idiyas.com/inventor/olatunji-okunola

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1985

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1 patent (USPTO):Explore Patents

Title: Olatunji Okunola: Innovator in Gallium Arsenide Technology

Introduction

Olatunji Okunola is a notable inventor based in Orlando, FL (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on gallium arsenide devices. His expertise and creativity have led to the development of a unique photo-responsive device that has potential applications in various electronic systems.

Latest Patents

Olatunji Okunola holds a patent for a GaAs Schottky barrier photo-responsive device and method of fabrication. This invention involves a gallium arsenide photo-responsive device that features an intermediate, transparent layer of refractory metal or alkaline earth metal. This layer forms a strong bond between a non-hydroscopic oxide layer and a noble metal Schottky barrier layer. The device is designed with a gallium arsenide substrate and an epitaxial layer, both exhibiting a predetermined type of conductivity. The oxide layer covers the epitaxial layer, followed by the deposition of the transparent metal layer and the noble metal layer. An interdigitated ohmic contact is then formed on the noble metal layer, enhancing the device's functionality.

Career Highlights

Olatunji Okunola has worked for the United States of America as represented by the Administrator of the. His work has been instrumental in advancing the understanding and application of gallium arsenide technology. With a focus on innovation, he has dedicated his career to developing devices that improve electronic performance and efficiency.

Collaborations

Olatunji has collaborated with esteemed colleagues such as Charles Z Leinkram and George E Alcorn. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise, further enhancing the impact of their collective work.

Conclusion

Olatunji Okunola's contributions to gallium arsenide technology exemplify the spirit of innovation in the field of electronics. His patent for a photo-responsive device showcases his ability to merge theoretical knowledge with practical applications. As he continues to work in this dynamic field, his inventions will likely pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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