Nung-Che Cheng

Title: Nung-Che Cheng: Innovator in Semiconductor Technology

Introduction

Nung-Che Cheng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

One of his latest patents focuses on "Germanium hump reduction." This patent provides methods for forming semiconductor devices. The method includes receiving a workpiece that consists of a stack of semiconductor layers. It involves depositing a first pad oxide layer on a germanium-containing top layer of the stack, followed by a second pad oxide layer on the first pad oxide layer. Additionally, a pad nitride layer is deposited on the second pad oxide layer, and the stack is patterned using these layers as a hard mask. The process specifies that the depositing of the first pad oxide layer utilizes a first oxygen plasma power, while the second pad oxide layer is deposited with a greater second oxygen plasma power.

Career Highlights

Nung-Che Cheng is currently employed at Taiwan Semiconductor Manufacturing Company Ltd. His work has been instrumental in advancing semiconductor manufacturing techniques, particularly in the area of germanium-based devices.

Collaborations

He has collaborated with notable coworkers such as Shih-Hao Fu and Hung-Ju Chou, contributing to various projects that enhance semiconductor technology.

Conclusion

Nung-Che Cheng's innovative work in semiconductor technology, particularly through his patents, highlights his role as a key figure in the industry. His contributions continue to influence advancements in semiconductor manufacturing processes.