Company Filing History:
Years Active: 1989-1992
Title: Normand J Bergeron, Jr: Innovator in Vertical Transistor Technology
Introduction
Normand J Bergeron, Jr. is a notable inventor based in New Bedford, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical transistor devices. With a total of 3 patents to his name, Bergeron has demonstrated a commitment to advancing electronic device performance.
Latest Patents
Among his latest innovations is a vertical transistor device fabricated with semiconductor regrowth. This device is characterized by active regions that are vertically separated by a narrower control region. The control region is defined by conducting layer extensions that extend into a groove, within which semiconductor material is regrown during the fabrication process. Additionally, the device features regions of isolating material located horizontally adjacent to the active regions. This isolating material serves to reduce parasitic capacitance and improve thermal distribution within the device, thereby enhancing frequency and power performance.
Career Highlights
Normand J Bergeron, Jr. is affiliated with the Massachusetts Institute of Technology, where he continues to contribute to research and development in semiconductor technologies. His work has been instrumental in pushing the boundaries of what is possible in electronic devices.
Collaborations
Throughout his career, Bergeron has collaborated with esteemed colleagues such as Mark Alexander Hollis and Kirby B Nichols. These partnerships have fostered innovation and have led to advancements in the field of vertical transistor technology.
Conclusion
Normand J Bergeron, Jr. stands out as a key figure in the realm of semiconductor innovation. His work on vertical transistor devices showcases his dedication to improving electronic performance and efficiency. Through his patents and collaborations, he continues to influence the future of technology.