Massachusetts Institute of Technology

Normand J Bergeron, Jr

Mark Alexander Hollis

Kirby B Nichols

Carl O Bozler

William D Goodhue

A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.

Vertical transistor device fabricated with semiconductor regrowth

Horizontal and vertical transistors, such as, HEMT/SDHT devices are described with opposed gates for preventing substrate leakage current along with the methods for making same. Also a process for making single gate angled V-HEMT devices is described.

Growing community of inventors

New Bedford, MA, United States of America

Normand J Bergeron, Jr