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Title: Noriyuki Yabuoshi: Innovator in Semiconductor Technology
Introduction
Noriyuki Yabuoshi is a prominent inventor based in Hitachinaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the design of integrated circuit devices. With a total of 2 patents to his name, Yabuoshi's work has had a notable impact on the industry.
Latest Patents
Yabuoshi's latest patents include a semiconductor integrated circuit device that features MISFETs, each with a gate electrode that extends over a boundary region between an active region and an element isolation trench. The design allows the gate electrode to cross the active region, extending from one end to the other. Notably, the gate length in the boundary region is greater than that in the central portion of the active region. The gate electrode is configured in an H-type flat pattern, covering one side of the boundary region and parts of two sides along the gate-width direction. The MISFETs are formed in electrically separated wells and are connected in series to form part of a reference voltage generating circuit.
Career Highlights
Throughout his career, Yabuoshi has worked with notable companies, including Renesas Technology Corporation. His expertise in semiconductor technology has positioned him as a key player in the development of innovative electronic solutions.
Collaborations
Yabuoshi has collaborated with esteemed colleagues such as Akio Nishida and Yasuko Yoshida. These partnerships have contributed to the advancement of semiconductor technologies and have fostered a collaborative environment for innovation.
Conclusion
Noriyuki Yabuoshi's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative designs continue to shape the future of integrated circuit devices.