Fussa, Japan

Norio Oza

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Other. Active years: 2003.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 58(Granted Patents)


Company Filing History:

goldMedal1 out of 834,411 
Other
 patents

Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Norio Oza: Innovator in Non-Volatile Memory Technology

Introduction

Norio Oza is a prominent inventor based in Fussa, Japan. He has made significant contributions to the field of memory technology, particularly with his innovative approach to non-volatile memory devices. His work has implications for improving the efficiency and reliability of memory operations.

Latest Patents

Norio Oza holds a patent for a non-volatile memory device that features a plurality of threshold voltage distributions. This invention addresses the challenges faced during verify operations after writing or erasing memory cells. By changing the verify voltage in three stages or more, Oza's design mitigates decision conditions, preventing non-convergence of write and erase operations. This advancement allows for quicker completion of these processes, enhancing overall performance.

Career Highlights

Throughout his career, Oza has focused on developing technologies that improve memory device functionality. His innovative solutions have positioned him as a key figure in the field, contributing to advancements that benefit various applications in electronics and computing.

Collaborations

Norio Oza has worked alongside notable colleagues, including Masayoshi Nakano and Toshihiro Tanaka. Their collaborative efforts have furthered research and development in memory technology, leading to impactful innovations.

Conclusion

Norio Oza's contributions to non-volatile memory technology exemplify the importance of innovation in the electronics industry. His patent and collaborative work continue to influence advancements in memory devices, showcasing the potential for future developments in this critical area.

Profile summary based on public USPTO records.
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