This inventor holds 2 USPTO granted patents. Top assignee: Fujitsu Corporation. Active years: 1991-1993.
Company Filing History:
Years Active: 1991-1993
Title: Norihito Miyoshi: Innovator in Semiconductor Technology
Introduction
Norihito Miyoshi is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving integrated circuits, which are essential components in modern electronic devices.
Latest Patents
Miyoshi's latest patents include a semiconductor integrated circuit that features an innovative interconnection design. This circuit comprises a substrate of a first semiconductor type, which is doped by a first impurity element with a specific density. The design includes a conductive layer on the back surface of the substrate and a first layer of a second semiconductor type on the front surface. This second layer is doped with a different impurity element and has a lower density than the first. The configuration allows for efficient power supply to the circuit elements, enhancing the performance of the integrated circuit.
Career Highlights
Norihito Miyoshi is currently employed at Fujitsu Corporation, where he continues to develop cutting-edge semiconductor technologies. His expertise in this field has positioned him as a valuable asset to the company and the industry at large.
Collaborations
Miyoshi has collaborated with notable colleagues, including Kouichi Suzuki and Makoto Yoshida. These partnerships have fostered innovation and contributed to the advancement of semiconductor technology.
Conclusion
Norihito Miyoshi's work in semiconductor technology exemplifies the spirit of innovation. His patents and collaborations reflect his commitment to enhancing electronic components, making a lasting impact on the industry.