Okazaki, Japan

Norihiro Tokura

This inventor holds 1 USPTO granted patent. Top assignee: Nippondenso Co., Ltd.. Active years: 1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Norihiro Tokura. Retrieved from https://idiyas.com/inventor/norihiro-tokura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1996

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1 patent (USPTO):Explore Patents

Title: Norihiro Tokura: Innovator in Semiconductor Technology

Introduction

Norihiro Tokura is a prominent inventor based in Okazaki, Japan. He is known for his significant contributions to the field of semiconductor technology. With a focus on innovation, Tokura has developed technologies that have the potential to impact various electronic applications.

Latest Patents

Tokura holds a patent for a vertical type insulated-gate semiconductor device. This invention showcases his expertise in creating advanced semiconductor solutions that enhance performance and efficiency in electronic devices. He has 1 patent to his name, reflecting his commitment to innovation in this critical field.

Career Highlights

Tokura is associated with Nippondenso Co., Ltd., a leading company in the automotive and electronics sectors. His work at Nippondenso has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in technology.

Collaborations

One of his notable collaborators is Naoto Okabe. Together, they have worked on various projects that leverage their combined expertise in semiconductor technology.

Conclusion

Norihiro Tokura's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Nippondenso Co., Ltd. highlight his role as a key player in advancing electronic solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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