This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Asm IP Holding B.v.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Norihiko Ishinohachi and Plasma-Assisted Dielectric Layer Formation.
Introduction
Norihiko Ishinohachi is an inventor associated with Tama, Japan, and Asm IP Holding B.V. His listed patent concerns a plasma-assisted method for forming a dielectric material layer on a substrate.
Latest Patents
The provided information lists 1 patent for Ishinohachi: “Method of Forming Dielectric Material Layer Using Plasma.” The method describes depositing a dielectric layer by supplying a precursor and reactant to a reaction chamber while applying pulsed plasma power. It then cures the layer by providing a curing gas and carrying out two curing steps, with the second step at a higher temperature than the first.
Career Highlights
Ishinohachi’s listed patent focuses on a staged deposition and curing process for dielectric materials. The approach combines plasma-assisted deposition with sequential temperature-controlled curing.
Collaborations
The provided information names Yoshiyuki Kikuchi and Yoshio Susa as Ishinohachi’s coworkers. His listed company affiliation is Asm IP Holding B.V.
Conclusion
Norihiko Ishinohachi’s listed invention addresses dielectric layer formation through plasma-assisted deposition followed by staged curing, reflecting his contribution to materials-processing technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile