Tokyo, Japan

Norifumi Ohtsuka

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Norifumi Ohtsuka. Retrieved from https://idiyas.com/inventor/norifumi-ohtsuka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:

goldMedal1 out of 834,513 
Other
 patents

Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Norifumi Ohtsuka: Innovator in Dry Etching Technology

Introduction

Norifumi Ohtsuka is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of dry etching technology, particularly with his innovative approach to environmentally friendly etching gases.

Latest Patents

Ohtsuka holds a patent for a fluorocarbon-based dry etching gas. This gas is designed to be free of global environmental problems and is utilized in a dry etching method that employs a plasma gas derived from it. The dry etching gas consists of a fluorinated ether of carbon, fluorine, hydrogen, and oxygen, containing 2 to 6 carbon atoms.

Career Highlights

Throughout his career, Ohtsuka has focused on developing technologies that address environmental concerns while maintaining efficiency in industrial applications. His work has positioned him as a key figure in the advancement of sustainable practices in the semiconductor industry.

Collaborations

Ohtsuka has collaborated with notable colleagues, including Akira Sekiya and Tetsuya Takagaki. Their combined expertise has contributed to the successful development of innovative technologies in their field.

Conclusion

Norifumi Ohtsuka's contributions to dry etching technology highlight his commitment to innovation and environmental sustainability. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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