Company Filing History:
Years Active: 2003
Title: Norbert Gellrich: Innovator in Plasma-Chemical Etching
Introduction
Norbert Gellrich is a notable inventor based in Massenbachhausen, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the area of plasma-chemical etching processes.
Latest Patents
Gellrich holds a patent for a method of anisotropic plasma-chemical dry etching of silicon nitride layers using a gas mixture containing fluorine. This innovative etching gas mixture, which includes CHF, SF, and a non-oxidizing gas such as argon, allows for differential or selective etching of silicon nitride layers relative to silicon oxide layers. The absence of oxygen, chlorine, bromine, iodine, or halides in the gas mixture enables the process to be conducted in reactor systems equipped with oxidizable electrodes. By adjusting the gas flow rates or composition ratios, Gellrich's method allows for precise control over the etching selectivity and edge slope angle of the remaining silicon nitride layer, achieving a high etch rate for silicon nitride.
Career Highlights
Norbert Gellrich is associated with Temic Semiconductor GmbH, where he has applied his expertise in semiconductor manufacturing processes. His work has contributed to advancements in the efficiency and effectiveness of etching techniques used in the industry.
Collaborations
Gellrich has collaborated with Rainer Kirchmann, further enhancing the innovative capabilities within their field.
Conclusion
Norbert Gellrich's contributions to plasma-chemical etching represent a significant advancement in semiconductor technology. His patented methods continue to influence the industry, showcasing the importance of innovation in this field.