Nobuyo Sugiyama

Title: Nobuyo Sugiyama: Innovator in Nonvolatile Semiconductor Memory Technology

Introduction

Nobuyo Sugiyama is a prominent inventor known for her contributions to the field of semiconductor technology. Based in Hyogo, Japan, she has been instrumental in developing innovative solutions that enhance the performance of nonvolatile memory devices. With a total of four patents to her name, Sugiyama's work has significantly impacted the electronics industry.

Latest Patents

Among her latest patents is a nonvolatile semiconductor memory device and method for fabricating the same. This invention features a control gate electrode positioned on a stepped portion of a substrate, with a floating gate electrode designed to cover the stepped portion. The device operates at high speed with low voltage, making it a valuable advancement in memory technology. Another notable patent involves a nonvolatile semiconductor memory device that includes a floating gate electrode formed on a semiconductor region, which stores carriers injected from the semiconductor region. This design allows for efficient control of the stored carriers through a control gate electrode.

Career Highlights

Sugiyama has worked with Matsushita Electric Industrial Co., Ltd., where she honed her skills and contributed to various projects in semiconductor technology. Her innovative approach and dedication to her work have earned her recognition in the field.

Collaborations

Throughout her career, Sugiyama has collaborated with notable colleagues, including Hiromasa Fujimoto and Shinji Odanaka. These partnerships have fostered a creative environment that has led to significant advancements in semiconductor technology.

Conclusion

Nobuyo Sugiyama's contributions to nonvolatile semiconductor memory technology exemplify her innovative spirit and dedication to advancing the field. Her patents reflect a commitment to enhancing the performance and efficiency of memory devices, making her a key figure in the electronics industry.