Hitachi, Japan

Nobuya Sekimoto

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuya Sekimoto. Retrieved from https://idiyas.com/inventor/nobuya-sekimoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: Nobuya Sekimoto: Innovator in Ion Source Technology

Introduction

Nobuya Sekimoto is a distinguished inventor based in Hitachi, Japan. He is known for his contributions to the field of ion source technology. His innovative work has led to the development of a unique ion source device that enhances plasma generation.

Latest Patents

Nobuya Sekimoto holds a patent for an ion source device. This device comprises a plasma generating vessel designed to generate plasma, a plurality of magnets arranged on the outer periphery of the vessel to establish a cusp field, and means for supplying power to generate plasma. Additionally, it features an anode electrode located on the inner wall of the plasma generating vessel, which is adapted to be heated by electrons emitted from the plasma to maintain heat. He has 1 patent to his name.

Career Highlights

Nobuya Sekimoto has made significant strides in his career at Hitachi, Ltd. His work has been pivotal in advancing ion source technology, which is crucial for various applications in the semiconductor and materials processing industries.

Collaborations

Throughout his career, Nobuya has collaborated with notable colleagues, including Tadashi Sato and Yasunori Ohno. These collaborations have further enriched his research and development efforts.

Conclusion

Nobuya Sekimoto's innovative contributions to ion source technology exemplify his commitment to advancing scientific knowledge and practical applications. His work continues to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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