Tokyo, Japan

Nobutoshi Matsunaga

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobutoshi Matsunaga. Retrieved from https://idiyas.com/inventor/nobutoshi-matsunaga-jslo0wrf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Nobutoshi Matsunaga: Innovator in Field Effect Transistors

Introduction

Nobutoshi Matsunaga is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors. His innovative work has led to advancements that enhance the performance and reliability of electronic devices.

Latest Patents

Matsunaga holds a patent for a field effect transistor that is formed on a semi-insulator or compound semiconductor substrate. This invention features a first semiconductor layer that creates a source region, a drain region, and a channel layer. Additionally, it includes a second semiconductor layer that has a reverse conduction type compared to the first layer. The second layer is designed to be totally depleted, ensuring that a portion adjacent to the substrate remains conductive. This structure effectively prevents the short channel effect and mitigates soft errors caused by alpha particles. Furthermore, a threshold voltage control arrangement is incorporated, utilizing a control electrode linked to the second semiconductor layer along with a feedback arrangement.

Career Highlights

Matsunaga is associated with Hitachi, Ltd., a leading company in the technology sector. His work at Hitachi has allowed him to push the boundaries of semiconductor research and development. His innovative contributions have been instrumental in advancing the capabilities of electronic components.

Collaborations

Throughout his career, Matsunaga has collaborated with notable colleagues, including Yasunari Umemoto and Nobuo Kotera. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Nobutoshi Matsunaga's work in the field of field effect transistors exemplifies his commitment to advancing semiconductor technology. His innovative patent and collaborations with esteemed colleagues highlight his significant impact on the industry. His contributions continue to influence the development of reliable and efficient electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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