This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1992.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1992
Title: Nobutoshi Matsunaga: Innovator in Field Effect Transistors
Introduction
Nobutoshi Matsunaga is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors. His innovative work has led to advancements that enhance the performance and reliability of electronic devices.
Latest Patents
Matsunaga holds a patent for a field effect transistor that is formed on a semi-insulator or compound semiconductor substrate. This invention features a first semiconductor layer that creates a source region, a drain region, and a channel layer. Additionally, it includes a second semiconductor layer that has a reverse conduction type compared to the first layer. The second layer is designed to be totally depleted, ensuring that a portion adjacent to the substrate remains conductive. This structure effectively prevents the short channel effect and mitigates soft errors caused by alpha particles. Furthermore, a threshold voltage control arrangement is incorporated, utilizing a control electrode linked to the second semiconductor layer along with a feedback arrangement.
Career Highlights
Matsunaga is associated with Hitachi, Ltd., a leading company in the technology sector. His work at Hitachi has allowed him to push the boundaries of semiconductor research and development. His innovative contributions have been instrumental in advancing the capabilities of electronic components.
Collaborations
Throughout his career, Matsunaga has collaborated with notable colleagues, including Yasunari Umemoto and Nobuo Kotera. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Nobutoshi Matsunaga's work in the field of field effect transistors exemplifies his commitment to advancing semiconductor technology. His innovative patent and collaborations with esteemed colleagues highlight his significant impact on the industry. His contributions continue to influence the development of reliable and efficient electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
