Akishima, Japan

Nobuo Komatsu


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 35(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Nobuo Komatsu: Innovator in Semiconductor Memory Technology

Introduction

Nobuo Komatsu is a notable inventor based in Akishima, Japan. He has made significant contributions to the field of semiconductor memory devices. His innovative work has led to the development of technologies that enhance the performance and efficiency of dynamic RAM.

Latest Patents

Nobuo Komatsu holds a patent for a semiconductor memory device that includes means for providing a precharge. This dynamic type RAM features a precharge control signal that is supplied to a gate of a precharge MOSFET. The signal precharges complementary data lines to a half level during the memory access period until the selection of the word line. The precharge control signal is set to a low level for the selected memory mat and a high level for non-selective memory mats.

Career Highlights

Throughout his career, Nobuo Komatsu has worked with prominent companies in the technology sector. He has been associated with Hitachi, Ltd. and Hitachi Vlsi Engineering Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Nobuo Komatsu has collaborated with esteemed colleagues in his field, including Shouji Wada and Mitsuhiro Takano. These partnerships have fostered innovation and have been instrumental in the development of new technologies.

Conclusion

Nobuo Komatsu's contributions to semiconductor memory technology exemplify his dedication to innovation. His patent and career achievements reflect his expertise and impact on the industry. His work continues to influence advancements in memory devices, showcasing the importance of inventors in technological progress.

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