Tokyo, Japan

Nobukazu Teranishi

This inventor holds 24 USPTO granted patents and 2 published patent applications, primarily in Solid-State Imaging. Top assignees: Nec Corporation, Panasonic Corporation, Matsushita Electric Industrial Co., Ltd.. Active years: 1984-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobukazu Teranishi. Retrieved from https://idiyas.com/inventor/nobukazu-teranishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 95.8

Average Co-Inventor Count = 2.9

ph-index = 10

Forward Citations = 259(Granted Patents)


Location History:

  • Kyoto, JP (2014)
  • Tokyo, JP (1984 - 2017)

Company Filing History:


Years Active: 1984-2017

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Areas of Expertise:
Solid-State Image Sensor
Image Capture Device
Photodetector
Micro-Lenses
Camera Manufacturing
Color Filter
Infrared Detecting Apparatus
Optical Fiber Bundle
Image Lag Reduction
Pixel Array Structure
Transparent Film
Metal Wirings
24 patents (USPTO):Explore Patents

Title: **Nobukazu Teranishi: Pioneer in Imaging Technologies**

Introduction

Nobukazu Teranishi is a renowned inventor based in Tokyo, Japan, recognized for his significant contributions to imaging technologies. With a remarkable portfolio of 24 patents, Teranishi has played a pivotal role in advancing the field of optical devices and semiconductor photodetectors.

Latest Patents

Among his latest innovations, Teranishi has developed an innovative **Image Capture Device**. This device employs read electrodes to efficiently drain signal charges from photoelectric conversion units within individual pixels, allowing for enhanced image quality. The unique design utilizes two exposure periods where the signal charges from adjacent pixels are combined and processed, resulting in superior image capture under varying light conditions.

Another notable patent is his **Semiconductor Photodetector**, featuring a charge multiplication region that transforms incident light into charge through avalanche multiplication. The architecture includes a charge storage part that stores signal charges and a detection circuit that amplifies the signal charge into a usable voltage. This technology presents significant advancements in the fields of imaging and detection.

Career Highlights

Teranishi has held positions at leading technology companies such as NEC Corporation and Panasonic Corporation. His work at these organizations has been instrumental in developing next-generation imaging technologies and semiconductor devices that continue to impact the market today.

Collaborations

Throughout his career, Nobukazu Teranishi has collaborated with esteemed colleagues including Hiroshi Sakoh and Masato Kobayashi. These partnerships have fostered an environment of innovation and creativity, leading to groundbreaking advancements in their respective fields.

Conclusion

Nobukazu Teranishi’s contributions as an inventor exemplify the spirit of innovation in technology. His extensive patents and collaborations with leading companies and fellow inventors sustain his legacy and impact on the industry. As imaging technology continues to evolve, Teranishi's work remains a cornerstone in the pursuit of enhanced optical devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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