Company Filing History:
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Years Active: 1991-2014
Title: Nobuaki Yoneya: Innovator in Semiconductor Technology
Introduction
Nobuaki Yoneya is a prominent inventor based in Takasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of integrated circuit devices. With a total of 3 patents to his name, Yoneya's work has had a notable impact on the industry.
Latest Patents
Yoneya's latest patents focus on semiconductor integrated circuit devices and IC cards. One of his inventions enables a power-supply voltage terminal and an internal circuit to be isolated from each other during noncontact operations. This innovation includes a first power supply circuit that rectifies and smooths an AC signal from an antenna, along with a second power supply circuit that features a voltage control circuit for managing the gate terminal voltage of a first MOS transistor. Additionally, it incorporates a substrate potential control circuit and a second MOS transistor that facilitates the conductive state of the substrate and gate voltages based on the power supply used. This design allows for efficient operation without significantly increasing the chip area.
Career Highlights
Throughout his career, Nobuaki Yoneya has worked with notable companies such as Renesas Electronics Corporation and Hitachi, Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Yoneya has collaborated with talented individuals in the field, including Kazuki Watanabe and Yuichi Ohkubo. These partnerships have likely enhanced his research and development efforts.
Conclusion
Nobuaki Yoneya's contributions to semiconductor technology through his innovative patents demonstrate his commitment to advancing the field. His work continues to influence the development of integrated circuit devices, showcasing the importance of innovation in technology.