Yokohama, Japan

Noboru Sugiyama

This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Semiconductor Limited. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Noboru Sugiyama. Retrieved from https://idiyas.com/inventor/noboru-sugiyama-t1bwcf9h

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Noboru Sugiyama: Innovating Semiconductor Exposure Methods

Introduction: Noboru Sugiyama is a notable inventor based in Yokohama, Japan, recognized for his contributions to semiconductor technology. With a strong focus on exposure methods used in the fabrication of semiconductor devices, he has achieved several milestones in the field.

Latest Patents: Sugiyama holds one patent titled "Exposure method and method of making a semiconductor device." This patent outlines an innovative exposure method that involves generating a reticle exposure pattern based on a target pattern. It also encompasses performing lithography simulations to create a simulation pattern, generating differential data, and executing both optical and electron-beam exposure processes.

Career Highlights: Noboru Sugiyama is currently associated with Fujitsu Semiconductor Limited, a leading company in semiconductor development. His work is pivotal in enhancing the efficiency and accuracy of semiconductor manufacturing, which is vital for modern electronic devices.

Collaborations: Throughout his career, Sugiyama has collaborated with other talented professionals, including Masahiko Minemura and Seiji Makino. These collaborations have allowed for shared expertise and contributed to the innovative processes developed under his guidance.

Conclusion: Noboru Sugiyama's inventive spirit and dedication to advancing semiconductor technologies have firmly established him as a valuable contributor to the industry. His patent and collaborative efforts continue to shape the future of semiconductor device fabrication, reflecting the importance of innovation in sustaining technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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