Oakland, CA, United States of America

Noah Patrick Allen

USPTO Granted Patents = 2 

Average Co-Inventor Count = 6.9

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Innovations of Noah Patrick Allen: A Pioneer in Heterostructure Design

Introduction: Noah Patrick Allen, based in Oakland, CA, is a recognized inventor with significant contributions to the field of semiconductor technology. With a focus on enhancing material properties through innovative methods, Allen holds a patent that showcases his ingenuity and expertise.

Latest Patents: Allen's notable patent is titled "Field Assisted Interfacial Diffusion Doping Through Heterostructure Design." This innovative apparatus comprises a heterostructure that includes a substrate made of Group-III-nitride material. It features a source layer with a dopant strategically positioned on the substrate's surface. Additionally, a conductive cap layer is placed on the source layer. The associated method of electric field-enhanced impurity diffusion involves obtaining a heterostructure and applying a thermal annealing treatment to the assembly. By establishing an electric field gradient within the source layer and the cap layer, the invention facilitates the diffusion of elements and dopants, thereby altering the conductivity and magnetic characteristics of the substrate.

Career Highlights: Allen is currently associated with Lawrence Livermore National Security, LLC, a reputable organization renowned for its pioneering work in national security and advanced scientific research. His contributions have not only propelled technological advancements but have also paved the way for innovative applications in various fields.

Collaborations: Throughout his career, Noah Patrick Allen has collaborated with esteemed colleagues, including Clint Frye, whose expertise complements his work in enhancing material properties. Their partnership exemplifies the power of teamwork in driving innovation and achieving groundbreaking results.

Conclusion: Noah Patrick Allen stands out as a visionary inventor in the realm of semiconductor technology. His patent on field-assisted interfacial diffusion doping through heterostructure design marks a significant breakthrough with potential applications across multiple industries. As his career progresses, Allen continues to contribute to the advancement of science and technology, solidifying his legacy as an influential figure in the innovation landscape.

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