The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Feb. 03, 2021
Lawrence Livermore National Security, Llc, Livermore, CA (US);
Joel Basile Varley, Livermore, CA (US);
Noah Patrick Allen, Oakland, CA (US);
Clint Frye, Livermore, CA (US);
Kyoung Eun Kweon, Pleasonton, CA (US);
Vincenzo Lordi, Livermore, CA (US);
Lars Voss, Livermore, CA (US);
Lawrence Livermore National Security, LLC, Livermore, CA (US);
Abstract
An apparatus includes a heterostructure including a substrate of Group-III-nitride material, a source layer including a dopant positioned on a surface of the substrate, and a conductive cap layer positioned on the source layer. A method of electric field-enhanced impurity diffusion includes obtaining a heterostructure including a substrate of Group-III-nitride semiconductor material, a source layer including a dopant positioned directly on the substrate, and a conductive cap layer positioned above the source layer, and applying a thermal annealing treatment to the heterostructure. An electric field gradient is established within the source layer and the cap layer for causing diffusion of an element from the substrate to the cap layer, and for causing diffusion of the dopant from the source layer to a former location of the element in the substrate thereby changing a conductivity and/or magnetic characteristic of the substrate.