Bengaluru, India

Nivedya Parambath Sasi

This inventor holds 23 USPTO granted patents and 22 published patent applications and 3 EPO patents, primarily in Wireless Communication Security. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd., Nec Corporation. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nivedya Parambath Sasi. Retrieved from https://idiyas.com/inventor/nivedya-parambath-sasi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 69.6

 

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2023-2026

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Areas of Expertise:
Authentication
Key Management
Wireless Security
5G Communication
Cyber-Attack Detection
Credential Storage
Network Authorization
Edge Computing
V2X Communication
Secure Connections
Privacy Protection
NFC Device Security
23 patents (USPTO):Explore Patents

Title: Nivedya Parambath Sasi - Innovator from Bengaluru

Introduction: Nivedya Parambath Sasi is a renowned inventor based in Bengaluru, India, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Nivedya Parambath Sasi holds several patents in the areas of artificial intelligence, machine learning, and renewable energy technologies, showcasing his diverse expertise and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Nivedya Parambath Sasi has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Nivedya Parambath Sasi has collaborated with top scientists, engineers, and researchers from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Nivedya Parambath Sasi's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and technologists worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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