Erfurt, Germany

Nis Hauke Hansen

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: X-Fab Global Services Gmbh. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nis Hauke Hansen. Retrieved from https://idiyas.com/inventor/nis-hauke-hansen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Innovations by Nis Hauke Hansen

Introduction

Nis Hauke Hansen is a notable inventor based in Erfurt, Germany. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances functionality and efficiency.

Latest Patents

Hansen holds a patent for a semiconductor device along with multi-functional units and a method for manufacturing a semiconductor device. This semiconductor component includes at least two identical functional units that are interconnected. Each functional unit comprises at least one gate finger, one source finger, and one drain finger, with wiring that includes conductor tracks. The design allows for improved connectivity and performance of the semiconductor device.

Career Highlights

Nis Hauke Hansen is currently employed at X-Fab Global Services GmbH, where he continues to innovate in the semiconductor industry. His work focuses on enhancing the capabilities of semiconductor components, contributing to advancements in technology.

Collaborations

Hansen collaborates with Ralf Lerner, a fellow professional in the field. Their partnership fosters innovation and the development of cutting-edge semiconductor solutions.

Conclusion

Nis Hauke Hansen's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at X-Fab Global Services GmbH highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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