Ning Tang

Title: Innovator Ning Tang: Pioneering Semiconductor Technology in Chengdu

Introduction: Ning Tang is a prominent inventor based in Chengdu, China, known for his significant contribution to the semiconductor industry. With a focus on high voltage power semiconductor devices, he has made strides in enhancing the efficiency and functionality of electronic components.

Latest Patents: Ning Tang holds a patent titled "SOI lateral homogenization field high voltage power semiconductor device, manufacturing method and application thereof." This innovative device features a type I conductive semiconductor substrate, a type II conductive drift region, and includes complex components such as a field clamped layer and various dielectric oxide layers. The invention allows for high doping concentration through the full-region depletion effect formed by vertical floating field plate arrays, enhancing the performance of power semiconductor devices.

Career Highlights: As an inventor, Ning Tang is affiliated with the University of Electronic Science and Technology of China. His dedication to research and development has positioned him as a key contributor to advancements in semiconductor technologies. The integration of his patented device into practical applications showcases his expertise and commitment to innovation.

Collaborations: Throughout his career, Ning Tang has collaborated with fellow researchers such as Wentong Zhang and Ke Zhang. This collaborative spirit fosters knowledge exchange and accelerates the pace of innovation in their shared fields of interest.

Conclusion: Ning Tang stands as a vital figure in the semiconductor domain, with his pioneering inventions holding the potential to reshape technological applications. His contributions reflect the importance of continuous innovation and collaboration in advancing the capabilities of modern electronics.