Ning Cheung

Title: Ning Cheung: Innovator in Flash Memory Technology

Introduction

Ning Cheung is a prominent inventor based in San Jose, CA, known for her contributions to the field of flash memory technology. With a focus on innovative methods for fabricating dual bit memory devices, she has made significant strides in enhancing data storage solutions.

Latest Patents

Ning Cheung holds a patent for "Methods for fabricating dual bit flash memory devices." This invention outlines a method that includes forming a charge trapping layer over a substrate and etching an isolation opening through this layer. The process involves creating an oxide layer over the charge trapping layer and within the isolation opening, followed by the fabrication of a control gate. The control gate serves as an etch mask for the oxide and charge trapping layers, while also acting as an implantation mask for impurity dopants into the substrate.

Career Highlights

Ning Cheung has made a notable impact in her career, particularly through her work at Spansion LLC. Her innovative approaches have contributed to advancements in memory device technology, showcasing her expertise and dedication to the field.

Collaborations

Throughout her career, Ning has collaborated with talented individuals such as Minghao Shen and Fred Cheung. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Ning Cheung's work in the realm of flash memory technology exemplifies her innovative spirit and commitment to advancing data storage solutions. Her contributions continue to influence the industry and pave the way for future developments.