Ninad Shinde

Title: Innovations of Ninad Shinde in Silicon Oxynitride Film Technology.

Introduction

Ninad Shinde is a notable inventor based in Shizuoka, Japan. He has made significant contributions to the field of materials science, particularly in the development of silicon oxynitride films. His innovative approach aims to reduce energy costs in film formation processes.

Latest Patents

Ninad Shinde holds a patent for a method of forming silicon oxynitride films. The patent, titled "Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed thereby," outlines a process that includes casting a film-formable coating composition containing a polysilazane compound on a substrate surface. The method further involves drying the coat to remove excess solvent and irradiating the dried coat with UV light at a temperature lower than 150°C. This invention is designed to enhance efficiency and reduce energy consumption in the manufacturing process.

Career Highlights

Ninad Shinde is currently employed at Merck Patent GmbH, where he continues to innovate in the field of materials science. His work focuses on developing advanced materials that can be utilized in various applications, contributing to the company's reputation as a leader in the industry.

Collaborations

Ninad has collaborated with talented coworkers, including Tatsuro Nagahara and Yusuke Takano. Their combined expertise fosters a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Ninad Shinde's contributions to the field of silicon oxynitride film technology exemplify his commitment to innovation and efficiency. His patent reflects a significant advancement in materials science, showcasing his role as a leading inventor in this domain.