The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Aug. 10, 2011
Applicants:
Ninad Shinde, Shizuoka, JP;
Tatsuro Nagahara, Shizuoka, JP;
Yusuke Takano, Tokyo, JP;
Inventors:
Assignee:
Merck Patent GmbH, Darmstadt, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/02 (2006.01); B05D 3/06 (2006.01); C23C 18/12 (2006.01); C23C 18/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0214 (2013.01); B05D 3/065 (2013.01); C23C 18/1216 (2013.01); C23C 18/122 (2013.01); C23C 18/14 (2013.01); H01L 21/02222 (2013.01); H01L 21/02348 (2013.01); H01L 21/02282 (2013.01);
Abstract
The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.