Laguna Niguel, CA, United States of America

Nima Beikae

This inventor holds 6 USPTO granted patents. Top assignee: Silanna Asia Pte Ltd. Active years: 2020-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nima Beikae. Retrieved from https://idiyas.com/inventor/nima-beikae

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2020-2024

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6 patents (USPTO):Explore Patents

Title: Nima Beikae: Innovator in Thyristor and BJT Technologies

Introduction

Nima Beikae is a prominent inventor based in Laguna Niguel, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of thyristors and bipolar junction transistors (BJTs). With a total of 6 patents to his name, Beikae continues to push the boundaries of innovation in electronics.

Latest Patents

Among his latest patents is the "Tiled Lateral Thyristor." This invention features a thyristor tile that includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. The thyristor comprises a plurality of PNP tiles and a plurality of NPN tiles arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles, and interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.

Another notable patent is the "Tiled Lateral BJT." This invention describes a lateral transistor tile formed with first and second collector regions that longitudinally span the first and second sides of the transistor tile. A base region and an emitter region are positioned between the first and second collector regions, centered on a longitudinal midline of the transistor tile. The base-collector current, collector-emitter current, and base-emitter current flow horizontally, with the direction of the base-emitter current being perpendicular to the direction of the base-collector and collector-emitter currents. Lateral BJT transistors with various layouts are formed from multiple tiles that share common components.

Career Highlights

Nima Beikae is currently employed at Silanna Asia Pte Ltd, where he continues to innovate and develop advanced semiconductor technologies. His work has garnered attention in the industry, contributing to the advancement of electronic components.

Collaborations

Beikae collaborates with Vadim Kushner, leveraging their combined expertise to drive innovation in their projects.

Conclusion

Nima Beikae is a distinguished inventor whose work in thyristor and BJT technologies has made a significant impact in the field of electronics. His innovative patents and contributions continue to shape the

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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