Stade, Germany

Nils Sandersfeld

This inventor holds 1 USPTO granted patent. Top assignee: Nxp B.v.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nils Sandersfeld. Retrieved from https://idiyas.com/inventor/nils-sandersfeld

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Nils Sandersfeld: Innovator in Non-Volatile Memory Technology

Introduction

Nils Sandersfeld is a notable inventor based in Stade, Germany. He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique memory circuit that combines different types of memory elements.

Latest Patents

Nils Sandersfeld holds a patent for a "Combined EEPROM/Flash Non-Volatile Memory Circuit." This patent describes a non-volatile memory circuit that includes memory rows and supporting circuits. At least one of the memory rows features an Electrically Erasable Programmable Read-Only Memory (EEPROM) element and a Flash memory element. The design allows these elements to share some supporting circuits and be accessed in parallel, enhancing efficiency and performance.

Career Highlights

Nils is currently employed at NXP B.V., a company known for its advancements in semiconductor technology. His work at NXP has allowed him to focus on innovative memory solutions that cater to modern technological demands.

Collaborations

Throughout his career, Nils has collaborated with talented individuals such as Christoph Hans Joachim Garbe and Sönke Ostertun. These collaborations have contributed to the development of cutting-edge technologies in the field of memory circuits.

Conclusion

Nils Sandersfeld's contributions to non-volatile memory technology exemplify the spirit of innovation. His patent and work at NXP B.V. highlight his commitment to advancing memory solutions in the tech industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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