Nicolas Nohlier

Title: Inventor Profile: Nicolas Nohlier

Introduction

Nicolas Nohlier, an innovative inventor based in Deyme, France, has made notable contributions to the field of semiconductor technology. With expertise focused on developing devices that offer enhanced protection against electrostatic discharge, he holds a patent that reflects his commitment to advancing electronic solutions.

Latest Patents

Nicolas Nohlier's single patent is titled "Semiconductor device comprising a diode and electrostatic discharge protection device." This invention encompasses a semiconductor device featuring at least two holes formed in a substrate. Each hole possesses specific dimensions that create a diode, with unique doping characteristics designed to enhance performance and protection. The patent addresses the intricate designs where the doping type differs between the holes and the substrate, thus optimizing the device's functionality.

Career Highlights

Currently, Nicolas is affiliated with Murata Integrated Passive Solutions, a company renowned for its innovative advancements in electronic components. His work emphasizes the integration of semiconductor technologies, showcasing his ability to merge theoretical knowledge with practical applications. His achievements in this field contribute significantly to the continued evolution of electronic systems.

Collaborations

Throughout his career, Nicolas has collaborated with esteemed colleagues, including Gilles Ferru and Bertrand Courivaud. These professional relationships have fostered a dynamic environment for innovation and development, allowing the team to push the boundaries of what is achievable in semiconductor technology.

Conclusion

Nicolas Nohlier's contributions to the world of technology are profound, as evidenced by his patent and collaborations. His work at Murata Integrated Passive Solutions positions him as a key player in the advancement of semiconductor devices, and his innovative spirit continues to drive research and development in the industry.