Nicolas Degors

Title: Innovations by Nicolas Degors in Semiconductor Technology

Introduction

Nicolas Degors is a notable inventor based in Trets, France. He has made significant contributions to the field of semiconductor technology, particularly in the area of shallow trench isolation structures. His innovative methods have paved the way for advancements in semiconductor device fabrication.

Latest Patents

Nicolas Degors holds a patent for a method of forming a shallow trench isolation structure in a semiconductor device. This patent describes a detailed process involving the sequential formation of a bottom pad oxide layer, a middle silicon nitride layer, a middle oxide layer, and a top silicon nitride layer on a silicon substrate. The method includes photolithographic masking and anisotropic etching to create a trench in the substrate. An oxide material is deposited to fill the trenches, followed by a chemical mechanical polishing step that utilizes the top silicon nitride layer as a barrier. The process concludes with the removal of the top silicon nitride layer and an isotropic etch of the oxide layer below, sculpting the oxide material to a desirable shape.

Career Highlights

Nicolas Degors has been associated with Atmel Corporation, where he has applied his expertise in semiconductor technology. His work has contributed to the development of advanced semiconductor devices, enhancing their performance and reliability.

Collaborations

Throughout his career, Nicolas has collaborated with notable professionals in the field, including Timothy M. Barry and Donald A. Erickson. These collaborations have fostered innovation and have led to the successful development of various semiconductor technologies.

Conclusion

Nicolas Degors is a prominent figure in the semiconductor industry, recognized for his innovative methods in shallow trench isolation structures. His contributions continue to influence the field, showcasing the importance of innovation in technology.