Sprimont, Belgium

Ngoc Duy Nguyen

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Imec Vzw. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ngoc Duy Nguyen. Retrieved from https://idiyas.com/inventor/ngoc-duy-nguyen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Ngoc Duy Nguyen: Innovator in Semiconductor Technology

Introduction

Ngoc Duy Nguyen is a prominent inventor based in Sprimont, Belgium. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Ngoc Duy Nguyen holds a patent for a "Method for manufacturing a junction." This invention relates to a semiconductor device that includes a homojunction or a heterojunction with a controlled dopant concentration profile. The method involves forming a first semiconductor material with a specific dopant concentration and subsequently forming a second semiconductor material with a different dopant concentration. This process enhances the junction's properties by utilizing Atomic Layer Epitaxy or Vapor Phase Doping techniques.

Career Highlights

Ngoc Duy Nguyen is associated with Imec, a leading research and innovation hub in nanoelectronics and digital technologies. His work at Imec has positioned him as a key player in advancing semiconductor manufacturing techniques.

Collaborations

Ngoc Duy Nguyen has collaborated with notable colleagues, including Roger Loo and Matty Caymax. Their combined expertise contributes to the innovative environment at Imec.

Conclusion

Ngoc Duy Nguyen's contributions to semiconductor technology through his patent and work at Imec highlight his role as an influential inventor in the field. His innovative methods are paving the way for advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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