Suffolk, United Kingdom

Neil McIntyre

This inventor holds 1 USPTO granted patent. Top assignee: The Post Office. Active years: 1978.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Neil McIntyre. Retrieved from https://idiyas.com/inventor/neil-mcintyre-x0d0frsy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1978

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1 patent (USPTO):Explore Patents

Title: Neil McIntyre: Innovator in Semiconductor Technology

Introduction

Neil McIntyre is a notable inventor based in Suffolk, GB. He has made significant contributions to the field of semiconductor devices, particularly through his innovative work on IMPATT diodes. His expertise and dedication to advancing technology have earned him recognition in the industry.

Latest Patents

Neil McIntyre holds 1 patent related to the fabrication of semiconductor devices. His invention focuses on a specific sequence of steps that enables the mass production of IMPATT diodes without technological variations. This advancement is crucial for improving efficiency and consistency in semiconductor manufacturing.

Career Highlights

Neil currently works at The Post Office, where he applies his knowledge and skills in semiconductor technology. His role allows him to contribute to the development of innovative solutions that enhance the services provided by the organization.

Collaborations

Throughout his career, Neil has collaborated with talented individuals such as Ian S Groves and Kenneth Cooper. These partnerships have fostered a creative environment that encourages the exchange of ideas and the pursuit of technological advancements.

Conclusion

Neil McIntyre's contributions to semiconductor technology, particularly through his patent on IMPATT diodes, highlight his innovative spirit and commitment to excellence. His work continues to influence the field and pave the way for future advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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