Naveed Ansari

Title: Innovations of Naveed Ansari in Atomic Layer Deposition

Introduction

Naveed Ansari is a prominent inventor based in Fremont, CA (US). He has made significant contributions to the field of atomic layer deposition and etch processes. With a total of 3 patents to his name, his work focuses on reducing roughness in various applications.

Latest Patents

One of Naveed's latest patents involves methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes. The patent describes techniques where, after a mask is provided on a substrate, a conformal layer is deposited on the mask by ALD to reduce roughness. Additionally, it outlines the process of etching a layer underlying the mask to form patterned features with reduced roughness. In some implementations, after a substrate is etched to a first depth, a conformal layer is deposited by ALD on the sidewalls of the features to protect them and further reduce roughness during subsequent etch processes. The ALD and etch processes may be performed in a plasma chamber, showcasing the innovative approach taken by Naveed.

Career Highlights

Naveed Ansari is currently employed at Lam Research Corporation, where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise in atomic layer deposition has positioned him as a key player in advancing manufacturing processes.

Collaborations

Naveed has collaborated with notable coworkers, including Xiang Zhou and Yoshie Kimura, to enhance the research and development efforts at Lam Research Corporation.

Conclusion

Naveed Ansari's contributions to atomic layer deposition and etch processes demonstrate his commitment to innovation in the semiconductor field. His patents reflect a deep understanding of the complexities involved in reducing roughness, which is crucial for advancing technology.