Boise, ID, United States of America

Nathan R Stoddard

This inventor holds 1 USPTO granted patent. Top assignee: Hewlett-Packard Development Company, L.p.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nathan R Stoddard. Retrieved from https://idiyas.com/inventor/nathan-r-stoddard

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Nathan R. Stoddard: Innovator in Nip Pressure Technology

Introduction

Nathan R. Stoddard is an accomplished inventor based in Boise, ID (US). He has made significant contributions to the field of technology, particularly in the area of nip pressure. His innovative work has led to the development of a patent that showcases his expertise and creativity.

Latest Patents

Nathan holds a patent for "Nip pressure," which describes embodiments of example apparatuses and methods for changing nip pressure. This invention reflects his commitment to advancing technology and improving processes in his field. He has 1 patent to his name, demonstrating his capability as an inventor.

Career Highlights

Nathan is currently employed at Hewlett-Packard Development Company, L.P., where he continues to apply his skills and knowledge in a professional setting. His work at HP has allowed him to collaborate with other talented individuals in the industry.

Collaborations

Throughout his career, Nathan has worked alongside notable colleagues such as Martin J. Marx and Robert W. Jewell. These collaborations have contributed to the success of various projects and innovations within the company.

Conclusion

Nathan R. Stoddard is a dedicated inventor whose work in nip pressure technology has made a lasting impact. His contributions to Hewlett-Packard and the field of technology exemplify his innovative spirit and commitment to excellence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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