Company Filing History:
Years Active: 2006-2008
Title: Nathan A. Aldrich: Innovator in Polishing Uniformity
Introduction
Nathan A. Aldrich is a notable inventor based in Pflugerville, TX (US). He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of polishing uniformity. With a total of 2 patents, Aldrich has developed innovative methods that enhance the efficiency and effectiveness of metal polishing processes.
Latest Patents
Aldrich's latest patents focus on a method of implementing polishing uniformity and modifying layout data. This method identifies areas of low overburden that degrade metal polish nonuniformity. It also describes a technique for modifying these areas to increase their overburden, thereby slowing down the metal polish rate and improving overall polish uniformity. The resulting structure forms slots in groups of functional lines, such as bus lines, when the functional lines have a density that exceeds a predetermined amount. In one embodiment, an area of the wafer has a maximum width of 1.5 microns in regions with a feature density greater than approximately 50 percent. These methods and resulting structures create a higher feature density, which ultimately increases polishing uniformity.
Career Highlights
Nathan A. Aldrich is currently employed at Freescale Semiconductor, Inc., where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the technology related to polishing processes, making significant impacts on manufacturing efficiency.
Collaborations
Aldrich has collaborated with several talented individuals in his field, including Edward Outlaw Travis, Jr. and Ruiqi Tian. These collaborations have contributed to the development of his innovative methods and patents.
Conclusion
Nathan A. Aldrich is a prominent inventor whose work in polishing uniformity has advanced semiconductor manufacturing processes. His contributions continue to influence the industry and pave the way for future innovations.