Company Filing History:
Years Active: 2014
Title: Nate Perkins - Innovator in Semiconductor Technology
Introduction
Nate Perkins is a notable inventor based in Fort Collins, CO (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on high electron mobility transistors.
Latest Patents
Nate Perkins holds a patent for a pseudomorphic high electron mobility transistor (pHEMT) that includes a low-temperature buffer layer. This invention features a substrate made from a Group III-V semiconductor material, with a buffer layer positioned over the substrate and a channel layer above the buffer layer. The buffer layer is characterized by microprecipitates of a Group V semiconductor element. Additionally, the patent describes a method for fabricating the pHEMT.
Career Highlights
Nate Perkins is currently employed at Avago Technologies General IP (Singapore) Pte. Ltd., where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of electronic devices.
Collaborations
Nate has collaborated with several talented individuals in his field, including Jonathan Kwadwo Abrokwah and Hans G Rohdin. These collaborations have contributed to the successful development of innovative technologies.
Conclusion
Nate Perkins is a distinguished inventor whose work in semiconductor technology has led to valuable advancements in the industry. His patent on the pseudomorphic high electron mobility transistor exemplifies his commitment to innovation and excellence.