The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Apr. 30, 2012
Nate Perkins, Fort Collins, CO (US);
Jonathan Abrokwah, Fort Collins, CO (US);
Hans G. Rohdin, Los Altos, CA (US);
Phil Marsh, Fort Collins, CO (US);
John Stanback, Fort Collins, CO (US);
Nate Perkins, Fort Collins, CO (US);
Jonathan Abrokwah, Fort Collins, CO (US);
Hans G. Rohdin, Los Altos, CA (US);
Phil Marsh, Fort Collins, CO (US);
John Stanback, Fort Collins, CO (US);
Avago Technologies General IP (Singapore) Pte. Ltd., Singagpore, SG;
Abstract
A pseudomorphic high electron mobility transistor (pHEMT) comprises: a substrate comprising a Group III-V semiconductor material; buffer layer disposed over the substrate; and a channel layer disposed over the buffer layer. The buffer layer comprises microprecipitates of a Group V semiconductor element. A method of fabricating a pHEMT is also described.