Narendhiran Cr

Title: Narendhiran Cr: Innovator in Memory System Error Correction

Introduction

Narendhiran Cr is a notable inventor based in San Jose, California. He has made significant contributions to the field of memory systems, particularly in error correction methods. His innovative approach addresses critical challenges in data integrity and reliability.

Latest Patents

Narendhiran holds a patent for a method titled "Failure mode study based error correction." This invention involves determining a bit error ratio for a memory block during a read operation. The method assesses whether the bit error ratio falls between two thresholds and performs a select gate drain (SGD) read operation accordingly. It generates first soft bit data using SGD data and applies low-density parity-check correction to enhance memory block performance. This patent showcases his expertise in improving memory system reliability.

Career Highlights

Narendhiran is currently employed at Western Digital Technologies, Inc., where he continues to innovate in the field of data storage solutions. His work focuses on enhancing memory systems, ensuring that data remains accurate and accessible. His contributions are vital in an era where data integrity is paramount.

Collaborations

Narendhiran collaborates with talented professionals such as Indu Kumari and Abhinand Amarnath. Together, they work on advancing technologies that improve memory systems and error correction methods.

Conclusion

Narendhiran Cr is a distinguished inventor whose work in memory system error correction is paving the way for more reliable data storage solutions. His innovative methods and collaborations highlight his commitment to advancing technology in this critical field.