Kanagawa, Japan

Naoteru Shigekawa

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Naoteru Shigekawa: Innovator in Semiconductor Technology

Introduction

Naoteru Shigekawa is a prominent inventor based in Kanagawa, Japan. He is known for his significant contributions to the field of semiconductor technology. With a focus on heterojunction field-effect transistors, Shigekawa has made strides in enhancing the performance and efficiency of electronic devices.

Latest Patents

Shigekawa holds a patent for a heterojunction field-effect transistor. This innovative device includes a first electron transit channel formation semiconductor layer formed on a substrate, consisting of a compound semiconductor. It also features a first electron supply semiconductor layer, a gate electrode, a source electrode, and a drain electrode. The design incorporates a second electron transit channel formation semiconductor layer, which is crucial for optimizing electron velocity and energy levels within the transistor. He has 1 patent to his name.

Career Highlights

Shigekawa is affiliated with Nippon Telegraph and Telephone Corporation, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of more efficient electronic components, which are essential for modern communication systems.

Collaborations

Shigekawa has collaborated with notable colleagues, including Takatomo Enoki and Kunihiro Arai. These partnerships have fostered innovation and have led to significant advancements in their respective fields.

Conclusion

Naoteru Shigekawa's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His work continues to influence the development of advanced electronic devices, showcasing the importance of research and collaboration in driving technological progress.

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