Yamato, Japan

Naoki Okuno

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naoki Okuno. Retrieved from https://idiyas.com/inventor/naoki-okuno-r3e7aloj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Naoki Okuno: Innovator in Semiconductor Technology

Introduction

Naoki Okuno is a prominent inventor based in Yamato, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of devices that enhance performance and reliability.

Latest Patents

Okuno holds a patent for a semiconductor device and method for manufacturing a semiconductor device. This innovation addresses the challenge of variation in transistor characteristics. The semiconductor device features a semiconductor film, a pair of blocking films positioned over the semiconductor film, and an insulating film located between the blocking films. The design includes a pair of n-type regions and an i-type region situated between them. Notably, the n-type regions overlap with the blocking films, while the i-type region overlaps with the insulating film. This configuration aims to improve the consistency and efficiency of semiconductor devices.

Career Highlights

Naoki Okuno is associated with Semiconductor Energy Laboratory Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of innovative solutions that address industry challenges.

Collaborations

Okuno has collaborated with Hiromi Sawai, working together to push the boundaries of semiconductor research and development.

Conclusion

Naoki Okuno's contributions to semiconductor technology exemplify his commitment to innovation and excellence in the field. His patent reflects a significant advancement that could lead to more reliable and efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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