Nishikasugai-gun, Japan

Naoki Kaneyama

This inventor holds 4 USPTO granted patents. Top assignee: Toyoda Gosei Co., Ltd.. Active years: 2002-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naoki Kaneyama. Retrieved from https://idiyas.com/inventor/naoki-kaneyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 53(Granted Patents)


Location History:

  • Inazawa, JP (2002 - 2005)
  • Nishikasugal-gun, JP (2006)

Company Filing History:


Years Active: 2002-2006

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4 patents (USPTO):Explore Patents

Title: Naoki Kaneyama: Innovator in Semiconductor Technology

Introduction

Naoki Kaneyama is a prominent inventor based in Nishikasugal-gun, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Group III nitride compound semiconductor devices. With a total of 4 patents to his name, Kaneyama's work has had a substantial impact on the industry.

Latest Patents

Kaneyama's latest patents include a Group III nitride compound semiconductor device featuring a superlattice structure. This innovative device utilizes a method where, after one of the layers constituting the superlattice structure is formed by an MOCVD method, NH gas is circulated together with H gas as a carrier gas to perform a purge step. Following this step, the next layer is formed. Another notable patent is for a Group III nitride compound semiconductor light-emitting device. This device includes a buffer layer of aluminum nitride (AlN) approximately 25 nm thick on a sapphire substrate. An n-layer of high carrier density, about 4.0 μm thick and made of GaN doped with silicon (Si), is formed on the buffer layer. An intermediate layer of non-doped InGaN is then created, followed by an n-type clad layer of GaN. The light-emitting layer is structured with two multilayer quantum well (MQW) cycles, enhancing its efficiency.

Career Highlights

Kaneyama is currently employed at Toyoda Gosei Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of light-emitting devices, which are crucial for various applications in electronics and lighting.

Collaborations

Throughout his career, Kaneyama has collaborated with notable colleagues, including Makoto Asai and Katsuhisa Sawazaki. These collaborations have fostered an environment of innovation and have contributed to the successful development of his patented technologies.

Conclusion

Naoki Kaneyama's contributions to semiconductor technology exemplify the spirit of innovation. His patents reflect a deep understanding of materials and engineering, positioning him as a key figure in the advancement of light-emitting devices. His ongoing work at Toyoda Gosei Co., Ltd. continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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