This inventor holds 1 USPTO granted patent. Top assignee: Panasonic Corporation. Active years: 2010.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2010
Title: Naoki Hishikawa and His Semiconductor Circuit Patent.
Introduction
Naoki Hishikawa is an inventor associated with Osaka, Japan, and Panasonic Corporation. His recorded patent concerns a multi-channel semiconductor integrated circuit.
Latest Patents
Hishikawa is credited with 1 patent: “Multi-channel semiconductor integrated circuit.” The invention includes high-side and low-side transistors, a level-shift circuit that drives the high-side transistor, and a pre-driver circuit that drives the low-side transistor. The transistors’ connection point serves as an output terminal. The level-shift circuit uses two N-type MOS transistors whose gates are driven by the pre-driver circuit. A diode connects to the drain of the MOS transistor whose gate is not connected to the high-side transistor’s gate, and its cathode connects to the output terminal.
Career Highlights
The available information associates Hishikawa’s work with Panasonic Corporation and identifies his patent in semiconductor integrated-circuit design.
Collaborations
Hiroki Matsunaga and Jinsaku Kaneda are listed as Hishikawa’s coworkers.
Conclusion
Naoki Hishikawa’s recorded invention addresses semiconductor circuit design through a combination of transistor-driving circuits and a diode connection, and is associated with his work at Panasonic Corporation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile