Tokyo, Japan

Naokazu Iwanade

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naokazu Iwanade. Retrieved from https://idiyas.com/inventor/naokazu-iwanade

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Naokazu Iwanade - Innovator in Thermoelectric Devices

Introduction

Naokazu Iwanade is an inventor based in Itabashi-ku, Japan. He has made significant contributions to the field of thermoelectric devices. His innovative approach focuses on enhancing power generation performance while maintaining hermetic sealing after heat cycles.

Latest Patent Applications

Naokazu Iwanade's notable patent application is titled "THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME." This application describes a thermoelectric device designed to improve power generation performance. It achieves this while simplifying the structure and enhancing productivity and reliability by reducing the number of components. The device includes a metal substrate, a thermoelectric element mounted at the center of the substrate's surface, and a metal lid that covers the upper and side surfaces of the thermoelectric element. Additionally, a joining metal member is provided around the peripheral portion of the metal substrate to hermetically seal the space between the substrate and the lid.

Conclusion

Naokazu Iwanade's work in thermoelectric devices showcases his innovative spirit and dedication to improving technology in this field. His contributions, particularly through his latest patent application, highlight the potential for advancements in energy efficiency and device reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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