Kokubu, Japan

Naohito Higashi

This inventor holds 1 USPTO granted patent. Top assignee: Kyocera Corporation. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naohito Higashi. Retrieved from https://idiyas.com/inventor/naohito-higashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Naohito Higashi: Innovator in Electrostatic Technology

Introduction

Naohito Higashi is a prominent inventor based in Kokubu, Japan. He is known for his significant contributions to the field of electrostatic technology. With a focus on innovation, he has developed solutions that enhance various industrial applications.

Latest Patents

Naohito Higashi holds a patent for an electrostatic chuck, which is a critical component in semiconductor manufacturing. This invention has improved the efficiency and precision of processes in the industry. His patent portfolio includes 1 patent that showcases his expertise in this specialized area.

Career Highlights

Higashi is currently employed at Kyocera Corporation, a leading company in the electronics sector. His work at Kyocera has allowed him to collaborate with other talented professionals and contribute to groundbreaking technologies. His career reflects a commitment to advancing electrostatic applications.

Collaborations

Throughout his career, Naohito Higashi has worked alongside notable colleagues, including Katsushi Sakaue and Shoji Kosaka. These collaborations have fostered an environment of innovation and creativity, leading to the development of advanced technologies.

Conclusion

Naohito Higashi is a distinguished inventor whose work in electrostatic technology has made a significant impact in the industry. His contributions continue to influence advancements in semiconductor manufacturing and related fields.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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