This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2002.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 834,513 Years Active: 2002
Title: Innovations of Nanottam P Bansal
Introduction
Nanottam P Bansal is a notable inventor based in North Olmsted, OH (US). He has made significant contributions to the field of materials science, particularly in the development of silicon-based substrates. His work focuses on enhancing the performance and durability of these materials in challenging environments.
Latest Patents
One of his key patents is titled "Silicon based substrate with environmental/thermal barrier layer." This innovative barrier layer is designed to inhibit the formation of gaseous species of silicon when exposed to high-temperature aqueous environments. The composition includes a barium-strontium alumino silicate, which provides enhanced protection and stability.
Career Highlights
Throughout his career, Nanottam P Bansal has demonstrated a commitment to advancing technology in his field. His patent reflects his expertise and innovative thinking, contributing to the ongoing development of materials that can withstand extreme conditions.
Collaborations
Nanottam has collaborated with several professionals in his field, including Harry Edwin Eaton, Jr. and William Patrick Allen. These partnerships have likely enriched his work and expanded the impact of his inventions.
Conclusion
Nanottam P Bansal's contributions to the field of materials science, particularly through his patented innovations, highlight his role as a significant inventor. His work continues to influence the development of advanced materials for various applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile