This inventor holds 1 USPTO granted patent. Top assignee: Uchicago Argonne, LLC. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Nannan Shan: Innovator in Atomic Layer Deposition
Introduction
Nannan Shan is a prominent inventor based in Clarendon Hills, Illinois. He has made significant contributions to the field of atomic layer deposition (ALD), particularly through his innovative patent that focuses on selective hydration strategies.
Latest Patents
Nannan Shan holds a patent titled "Selective hydration by site selective atomic layer deposition." This patent introduces a site-selective hydration strategy that enables site-selective atomic layer deposition. ALD is utilized to target specific locations on a crystalline material for deposition, enhancing the precision and effectiveness of the process. He has 1 patent to his name.
Career Highlights
Nannan Shan is currently employed at UChicago Argonne, LLC, where he continues to advance research in atomic layer deposition and related technologies. His work has garnered attention for its potential applications in various scientific and industrial fields.
Collaborations
Nannan collaborates with Lei Cheng, contributing to the innovative research environment at UChicago Argonne, LLC. Their combined expertise enhances the development of cutting-edge technologies in the field.
Conclusion
Nannan Shan's contributions to atomic layer deposition through his innovative patent demonstrate his commitment to advancing technology in this area. His work continues to influence the scientific community and pave the way for future innovations.